DocumentCode
72877
Title
Novel Cu-to-Cu Bonding With Ti Passivation at 180 
in 3-D Integration
Author
Yan-Pin Huang ; Yu-San Chien ; Ruoh-Ning Tzeng ; Ming-Shaw Shy ; Teu-Hua Lin ; Kou-Hua Chen ; Chi-Tsung Chiu ; Jin-Chern Chiou ; Ching-Te Chuang ; Wei Hwang ; Ho-Ming Tong ; Kuan-Neng Chen
Author_Institution
Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
34
Issue
12
fYear
2013
fDate
Dec. 2013
Firstpage
1551
Lastpage
1553
Abstract
A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180 °C. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.
Keywords
CMOS integrated circuits; copper; integrated circuit bonding; integrated circuit reliability; passivation; three-dimensional integrated circuits; titanium; 3D integration; CMOS-compatible bond structure; Cu; Ti; copper-to-copper bonding; diffusion behavior; electrical stability; reliability; temperature 180 degC; temperature cycling; temperature reduction; titanium passivation; titanium protection; Bonding; Copper; Electrical resistance measurement; Passivation; Reliability; Resistance; 3-D integration; Cu bonding; Ti passivation;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2285702
Filename
6650051
Link To Document