DocumentCode :
72877
Title :
Novel Cu-to-Cu Bonding With Ti Passivation at 180 
in 3-D Integration
Author :
Yan-Pin Huang ; Yu-San Chien ; Ruoh-Ning Tzeng ; Ming-Shaw Shy ; Teu-Hua Lin ; Kou-Hua Chen ; Chi-Tsung Chiu ; Jin-Chern Chiou ; Ching-Te Chuang ; Wei Hwang ; Ho-Ming Tong ; Kuan-Neng Chen
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
34
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
1551
Lastpage :
1553
Abstract :
A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180 °C. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.
Keywords :
CMOS integrated circuits; copper; integrated circuit bonding; integrated circuit reliability; passivation; three-dimensional integrated circuits; titanium; 3D integration; CMOS-compatible bond structure; Cu; Ti; copper-to-copper bonding; diffusion behavior; electrical stability; reliability; temperature 180 degC; temperature cycling; temperature reduction; titanium passivation; titanium protection; Bonding; Copper; Electrical resistance measurement; Passivation; Reliability; Resistance; 3-D integration; Cu bonding; Ti passivation;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2285702
Filename :
6650051
Link To Document :
