Graphene/transition metal dichalcogenide/metal vertical heterostructure transistor with large current ON/OFF ratio

Author

Moriya, Rai ; Sata, Yohta ; Yamaguchi, Takehiro ; Inoue, Yoshihisa ; Yabuki, Naoto ; Morikawa, Sei ; Masubuchi, Satoru ; Machida, Tomoki

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan

fYear

2015

fDate

1-4 July 2015

Firstpage

53

Lastpage

56

Abstract

We demonstrated exfoliated-graphene/transition metal dichalcogenide (TMD)/metal vertical field-effect transistor (vFET). The van der Waals junction between graphene and TMD exhibit Schottky barrier. Owing to the low density of state of graphene, the position of graphene´s Fermi level can be modulated by the external electric field, thus enable us electric field modulation of Schottky barrier height at graphene/TMD interface. Based on this mechanism, a vertical transport in the heterostructure exhibits large current modulation of 10⁵, and at the same time the heterostructure reveal operation current density of 10⁴ A/cm². These results reveal potential high performance of vFET for flexible electronics applications.

Keywords

Schottky barriers; flexible electronics; graphene; high electron mobility transistors; molybdenum compounds; titanium; van der Waals forces; C-MoS₂-Ti; Schottky barrier; exfoliated graphene; flexible electronics; graphene-transition metal dichalcogenide-metal heterostructure; van der Waals junction; vertical field effect transistor; vertical heterostructure transistor; Current measurement; Graphene; Junctions; Metals; Modulation; Schottky barriers; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2015.7173195

Filename

7173195