Title :
A novel Double-Gate Thin-Film Transistors with split-gate and RSD design
Author :
Cheng-Hao You ; Xian-Zhi Chen ; Feng-Tso Chien
Author_Institution :
Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan
Abstract :
In this paper, we propose a Double-Gate Thin-Film Transistors with split-gate structure and raised source/drain (RSD) structure (DGSG-TFT) design. This structure has double-gate with RSD structure, and the top gate is a split-gate structure design. The split-gate and RSD design can reduce the impact-ionization effect, and the double-gate design can further improve the device kink effect performance.
Keywords :
impact ionisation; integrated circuit design; thin film transistors; DGSG-TFT design; RSD structure; double-gate design; double-gate thin-film transistors; impact-ionization; raised source/drain design; split-gate structure; Electric fields; Logic gates; Performance evaluation; Semiconductor process modeling; Silicon; Split gate flash memory cells; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2015.7173210
