Temperature and illuminance detections by hybrid-type carrier-generation sensors using n-type and p-type poly-Si TFTs

Author

Kito, Katsuya ; Hayashi, Hisashi ; Kitajima, Shuhei ; Matsuda, Tokiyoshi ; Kimura, Mutsumi

Author_Institution

Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan

fYear

2015

fDate

1-4 July 2015

Firstpage

137

Lastpage

138

Abstract

We have evaluated temperature dependences of transistor characteristics in n-type and p-type poly-Si TFTs with and without visible light illumination. It is found that the temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, the temperature dependences change with visible light illumination, and the changes are different between the n-type and p-type poly-Si TFTs. Based on these results, we proposed a detection method to obtain simultaneously temperature and illuminance by hybrid-type carrier-generation sensors using n-type and p-type Poly-Si TFTs.

Keywords

elemental semiconductors; silicon; temperature measurement; temperature sensors; thin film sensors; thin film transistors; Si; hybrid-type carrier-generation sensor; n-type poly-Si TFT; off-leakage current; p-type poly-Si TFT; temperature detection; visible light illumination detection; Oscillators; Temperature; Temperature dependence; Temperature measurement; Temperature sensors; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2015.7173222

Filename

7173222