Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Author

Sadoh, Taizoh ; Jong-Hyeok Park ; Aoki, Rikuta ; Miyao, Masanobu

Author_Institution

Dept. of Electron., Kyushu Univ., Fukuoka, Japan

fYear

2015

fDate

1-4 July 2015

Firstpage

143

Lastpage

146

Abstract

Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10 μm) SiGe crystals on insulator is desired for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. Consequently, (111)-oriented large-grain (>10 μm) SiGe crystals are achieved on insulating substrates at low temperatures (~300°C). The grown SiGe crystals have uniform composition profiles. This technique will be useful to realize advanced flexible electronics.

Keywords

Ge-Si alloys; crystal growth; crystallisation; flexible electronics; gold; insulating materials; (111)-oriented large-grain SiGe crystals; Au-induced crystallization; SiGe-Au; flexible electronics; insulating substrates; large-grain SiGe crystals on insulator; low-temperature formation; orientation control; quasisingle crystal SiGe on insulator; stacked structures; uniform composition profiles; Aluminum oxide; Annealing; Crystallization; Gold; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2015.7173225

Filename

7173225