Temperature dependences of conductivity in undoped and doped poly-Si thin films grown on YSZ crystallization-induction layers by two-step irradiation method with pulsed laser

Author

Mai Lien Thi Kieu ; Horita, Susumu

Author_Institution

Japan Adv. Inst. Sci. & Tech. (JAIST), Ishikawa, Japan

fYear

2015

fDate

1-4 July 2015

Firstpage

225

Lastpage

226

Abstract

Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized on the YSZ layer is more suitable for application of electronic devices, compared with the Si film on glass.

Keywords

Hall effect; annealing; carrier density; carrier mobility; crystal growth from melt; crystallisation; electrical conductivity; elemental semiconductors; laser materials processing; phosphorus; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; yttrium compounds; zirconium compounds; AC Hall effect measurements; P-doped poly-Si thin films; Si; Si-YSZ-glass structure; Si-glass structure; Si:P; YSZ crystallization-induction layers; ZrO₂Y₂O₃; conductivity temperature dependence; electronic devices; two step pulsed laser irradiation method; undoped poly-Si thin films; Conductivity; Crystallization; Films; Glass; Hall effect; Silicon; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2015.7173249

Filename

7173249