• DocumentCode
    72883
  • Title

    Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3- \\mu{\\rm m} Wavelength

  • Author

    Sato, Nobuyoshi ; Shirao, M. ; Sato, Takao ; Yukinari, Masashi ; Nishiyama, Naoto ; Amemiya, Tomohiro ; Arai, Shigehisa

  • Author_Institution
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan
  • Volume
    25
  • Issue
    8
  • fYear
    2013
  • fDate
    15-Apr-13
  • Firstpage
    728
  • Lastpage
    730
  • Abstract
    Room-temperature continuous-wave operation of a 1.3- \\mu{\\rm m} npn-AlGaInAs/InP transistor laser is successfully achieved for the first time. A threshold current of 39 mA and an external differential quantum efficiency of 13% are obtained under common base operation, while simultaneous transistor action is achieved with a current gain \\beta of 0.02.
  • Keywords
    AlGaInAs/InP; quantum well laser; transistor laser;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2013.2249508
  • Filename
    6471747
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=72883