Title :
68–73 GHz common-base HBT amplifier in 55 nm SiGe technology
Author :
Saavedra, Carlos E. ; del Rio, David ; Berenguer, Roc
Author_Institution :
Centro de Estudios e Investig. Tec. (CEIT), San Sebastian, Spain
Abstract :
The design of a common-base (CB), power-combined, SiGe BiCMOS amplifier is reported. Wilkinson couplers are used for power splitting and combining at the input and output of the amplifier. The HBTs have three emitter fingers and each finger has a length of 2.7 μm and a width of 0.18 μm. The gain of the amplifier can be externally varied by biasing the HBTs from a 1.3-1.5 V dc supply applied to their collectors through on-chip bias tees and applying 850-900mV to the bases. Measurements on the fabricated amplifier reveal that the maximum gain can be varied between 10.91 and 15.75 dB, it has a 3-dB bandwidth from 68 to 73 GHz and an OP1dB of -1.8 dBm at 71 GHz. The chip area is 0.8 mm2 and it draws a dc power between 5.2 and 18.7 mW.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; coupled circuits; heterojunction bipolar transistors; millimetre wave amplifiers; HBT; SiGe; Wilkinson couplers; common-base power-combined SiGe BiCMOS amplifier; emitter fingers; frequency 68 GHz to 73 GHz; gain 10.91 dB to 15.75 dB; on-chip bias tees; power 5.2 mW to 18.7 mW; power combining; power splitting; size 0.18 mum; size 2.7 mum; voltage 1.3 V to 1.5 V; voltage 850 mV to 900 mV; BiCMOS integrated circuits; Couplers; Gain; Gain measurement; Heterojunction bipolar transistors; Silicon germanium; Transmission line measurements; BiCMOS integrated circuits; E-band; Millimeter wave integrated circuits; amplifiers;
Conference_Titel :
Millimeter Waves (GSMM), 2015 Global Symposium On
Conference_Location :
Montreal, QC
DOI :
10.1109/GSMM.2015.7175107
