DocumentCode :
729036
Title :
Prediction of aging impact on electromagnetic susceptibility of an operational amplifier
Author :
He Huang ; Boyer, Alexandre ; Ben Dhia, Sonia ; Vrignon, Bertrand
Author_Institution :
LAAS, Toulouse, France
fYear :
2015
fDate :
26-29 May 2015
Firstpage :
86
Lastpage :
89
Abstract :
This paper deals with the impact of aging on the electromagnetic susceptibility level of a CMOS operational amplifier (opamp). The aging impact can be modelled by the variation of several parameters of the MOSFET model, to predict the evolution of electromagnetic susceptibility (EMS) of the opamp block during the aging process.
Keywords :
CMOS integrated circuits; MOSFET; ageing; electromagnetic compatibility; operational amplifiers; CMOS opamp; EMS; MOSFET model; aging impact prediction; complementary metal-oxide semiconductor; electromagnetic susceptibility; metal oxide semiconductor field-effect transistor; operational amplifier; Aging; Electromagnetic compatibility; Electromagnetic interference; Frequency measurement; Integrated circuit modeling; Stress; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (APEMC), 2015 Asia-Pacific Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-6668-4
Type :
conf
DOI :
10.1109/APEMC.2015.7175235
Filename :
7175235
Link To Document :
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