Title :
Effects of time-variant non-linear TSV parameters on transient analysis for signal integrity
Author :
Piersanti, S. ; de Paulis, F. ; Orlandi, A. ; Achkir, B. ; Fan, J.
Author_Institution :
UAq EMC Lab., Univ. of L´Aquila, L´Aquila, Italy
Abstract :
This paper looksat the impact of considering the exact or approximated values for the nonlinear depletion capacitance in a TSV equivalent circuit for transient analysis. Furthermore, the effects of the time variant and nonlinear behavior of the doped bulk silicon substrate on signal propagation and crosstalk are also studied.
Keywords :
elemental semiconductors; equivalent circuits; integrated circuit interconnections; semiconductor doping; silicon; three-dimensional integrated circuits; transient analysis; Si; TSV equivalent circuit; bulk silicon substrate; nonlinear depletion capacitance; signal integrity; signal propagation; time-variant nonlinear TSV parameter; transient analysis; Capacitance; Crosstalk; Equivalent circuits; Integrated circuit modeling; Silicon; Substrates; Through-silicon vias;
Conference_Titel :
Electromagnetic Compatibility (APEMC), 2015 Asia-Pacific Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-6668-4
DOI :
10.1109/APEMC.2015.7175241
