DocumentCode
729040
Title
Effects of time-variant non-linear TSV parameters on transient analysis for signal integrity
Author
Piersanti, S. ; de Paulis, F. ; Orlandi, A. ; Achkir, B. ; Fan, J.
Author_Institution
UAq EMC Lab., Univ. of L´Aquila, L´Aquila, Italy
fYear
2015
fDate
26-29 May 2015
Firstpage
380
Lastpage
383
Abstract
This paper looksat the impact of considering the exact or approximated values for the nonlinear depletion capacitance in a TSV equivalent circuit for transient analysis. Furthermore, the effects of the time variant and nonlinear behavior of the doped bulk silicon substrate on signal propagation and crosstalk are also studied.
Keywords
elemental semiconductors; equivalent circuits; integrated circuit interconnections; semiconductor doping; silicon; three-dimensional integrated circuits; transient analysis; Si; TSV equivalent circuit; bulk silicon substrate; nonlinear depletion capacitance; signal integrity; signal propagation; time-variant nonlinear TSV parameter; transient analysis; Capacitance; Crosstalk; Equivalent circuits; Integrated circuit modeling; Silicon; Substrates; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility (APEMC), 2015 Asia-Pacific Symposium on
Conference_Location
Taipei
Print_ISBN
978-1-4799-6668-4
Type
conf
DOI
10.1109/APEMC.2015.7175241
Filename
7175241
Link To Document