DocumentCode
729064
Title
A new methodology for human metal model characterization
Author
Sirui Luo ; Salcedo, Javier A. ; Hajjar, Jean-Jacques ; Yuanzhong Zhou ; Liou, Juin J.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fYear
2015
fDate
26-29 May 2015
Firstpage
329
Lastpage
332
Abstract
A new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits (ICs) HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing.
Keywords
amplifiers; failure analysis; integrated circuit reliability; integrated circuit testing; leakage currents; HMM stress; IC; amplifier; human metal model characterization; industry standard system-level IEC gun testing; integrated circuit; leakage current method; product-level failure; wafer-level assessment; Hidden Markov models; Robustness; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility (APEMC), 2015 Asia-Pacific Symposium on
Conference_Location
Taipei
Print_ISBN
978-1-4799-6668-4
Type
conf
DOI
10.1109/APEMC.2015.7175272
Filename
7175272
Link To Document