AlGaN/GaN THz resonant plasmonic detectors with symmetric and asymmetric patterns deposited above homogeneous and inhomogeneous 2DEG

We investigate plasmonic THz detectors on Al-GaN/GaN hetero-structures for different configurations of the grating (symmetric or asymmetric pattern) and spatial modulation of the electron sheet density. The absorption spectra have been calculated for the different configurations and a few detectors have freshly been fabricated and the transmission and reflection spectra have been measured for one of them. It appears that these detectors could be the ideal candidate for an on-chip, electrically tunable, room-temperature operating and cheap THz detector.