• DocumentCode
    729219
  • Title

    Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

  • Author

    Yu-Chien Chiu ; Chun-Hu Cheng ; Chia-Chi Fan ; Po-Chun Chen ; Chun-Yen Chang ; Min-Hung Lee ; Chien Liu ; Shiang-Shiou Yen ; Hsiao-Hsuan Hsu

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    A nearly ideal subthreshold slope (SSmin ~58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.
  • Keywords
    ferroelectric storage; hafnium compounds; interface states; zirconium compounds; HfZrO; endurance cycling; ferroelectric memory; interface polarization fluctuation effect; interface states; nanosecond ferroelectric switching; subthreshold slope; Clocks; Fluctuations; High K dielectric materials; Logic gates; Switches; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175543
  • Filename
    7175543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729219