• DocumentCode
    729233
  • Title

    Materials parameter extraction using analytical models in PCMO based RRAM

  • Author

    Chakraborty, I. ; Singh, A.K. ; Kumbhare, P. ; Panwar, N. ; Ganguly, U.

  • Author_Institution
    Indian Inst. of Technol., Bombay, Mumbai, India
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    87
  • Lastpage
    88
  • Abstract
    In this paper, we have present analytical models based extraction of materials parameters for PCMO based RRAM. Based on a trap-SCLC model, the energy and spatial distribution of trap-density is extracted. A single-level trap energy is estimated. The uniform trap density model provides consistent trap density estimated from low bias Ohmic regime as well as high-bias Trap-Filled Limit regime.
  • Keywords
    calcium compounds; manganese compounds; praseodymium compounds; resistive RAM; silicon compounds; PCMO based RRAM; Pr0.7Ca0.3MnO; SiO2-Si; high-bias trap-filled limit regime; low bias Ohmic regime; materials parameter extraction; single-level trap energy; spatial distribution; trap-SCLC model; trap-density; uniform trap density model; Electrodes; Electrostatics; Numerical analysis; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175568
  • Filename
    7175568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729233