Vertical nanowire array Schottky junction - A new power rectifier concept

In a VNWA Schottky rectifier, V_br can be raised and/or R_s,sp lowered progressively by increasing S/R. This can be interpreted in several ways: the performance of this rectifier can be improved at the cost of device area; this rectifier offers an additional degree of flexibility in terms of the device area in device design; the structure of this rectifier allows tailoring of V_br and R_s,sp using a geometry parameter such as the device area, which is not possible in a conventional bulk rectifier; SiC or GaN bulk device performance can be achieved by a Si VNWA device of larger area; SiC or GaN VNWA Schottky rectifiers can achieve the performance of bulk Schottky rectifiers in even higher bandgap materials, which may not be available in practice.