Cerium oxide based bipolar resistive switching memory with low operation voltage and high resistance ratio

Resistive random access memory (RRAM) is attractive as a promising candidate for next generation nonvolatile memory due to its potential scalability beyond 10 nm feature size using a crossbar structure, fast switching speed, low operating power, and good reliability. Cerium oxide has high dielectric constant and various valance states, making cerium oxide a potential material for RRAM application. Nevertheless, fundamental characterization of CeOx based RRAMs i.e., the scalability, reliability and mechanism, has been only partially reported. In this paper the fundamental characteristics of cerium oxide RRAMs are studied. In this paper metal-insulator-metal (MIM) structure is studied for memory device characterization.