DocumentCode :
729239
Title :
Modulation-doped gate-normal tunnel FET for improved turn-on abruptness
Author :
Hsu, W. ; Mantey, J. ; Register, L.F. ; Banerjee, S.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
fYear :
2015
fDate :
21-24 June 2015
Firstpage :
103
Lastpage :
104
Abstract :
Summary form only given. The tunnel field-effect-transistor (TFET), which is expected to achieve a subthreshold swing (SS) of less than 60mV/dec, is one of the most promising device concepts for enabling supply power scaling to below 0.5 V. Encouraging experimental heterojunction-TFETs results with MOSFET-like ON-currents have been reported recently [1]-[2]. However, the SS increased in both high and low drain current regimes, resulting in a U-shaped relationship where a good SS was preserved only at a moderate drain current [1]-[2]. A characteristic behavior for TFETs is a SS increase with drain current, where the lowest achievable SS ideally should occur when tunneling begins. Possible explanations for the non-abrupt turn-on at low drain current regime include band edge abruptness, trap states that trigger trap-assisted tunneling, non-uniformity of the device system, and non-optimal electrostatic control of the device structure [3]. In this work, we focus on improving electrostatic control for gate-normal-TFETs to achieve better turn-on abruptness.
Keywords :
MOSFET; electron traps; field effect transistors; modulation; semiconductor doping; tunnel transistors; MOSFET-like ON-current; band edge abruptness; device system nonuniformity; gate-normal-TFET; heterojunction-TFET; modulation-doped gate-normal tunnel FET; nonoptimal electrostatic control; subthreshold swing; trap-assisted tunneling; tunnel field-effect-transistor; Dielectrics; High definition video; Logic gates; Silicon; Silicon germanium; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
Type :
conf
DOI :
10.1109/DRC.2015.7175576
Filename :
7175576
Link To Document :
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