DocumentCode
729245
Title
Photothermal electric effect of multilayer MoS2 -graphene heterojunction
Author
Joon Young Kwak ; Jeonghyun Hwang ; Calderon, Brian ; Alsalman, Hussain ; Schutter, Brian ; Spencer, Michael G.
Author_Institution
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear
2015
fDate
21-24 June 2015
Firstpage
121
Lastpage
122
Abstract
Due to the exceptional electrical and optical properties of graphene, public interest has grown rapidly since the material was exfoliated onto SiO2 in 2004 [1-3]. Other two dimensional (2D) crystal materials such as MoS2, hBN, and WSe2, individually or in combination with graphene, also have shown intriguing properties. One of the interesting applications is using the 2D heterojunction as a photodetector. There have been literatures reported on graphene-MoS2 heterojunction photodetectors, claiming the photoresponse mechanism as a photovoltaic effect (PV), which is due to the separation of electron-hole pairs created in MoS2 at less than 700 nm wavelengths [4, 5]. In this paper, we report photothermal electric effect (PTE) of a multilayer MoS2-graphene heterojunction photodetector based on the large differences of Seebeck coefficients between MoS2 (-700 μV/K) [6] and graphene (-50 μV/K) [7].
Keywords
Seebeck effect; chalcogenide glasses; graphene; molybdenum compounds; multilayers; photodetectors; photoelectricity; photothermal effects; semiconductor heterojunctions; 2D crystal materials; 2D heterojunction; MoS2-C; Seebeck coefficients; electrical properties; electron-hole pair separation; graphene; multilayer heterojunction photodetector; optical properties; photoresponse mechanism; photothermal electric effect; photovoltaic effect; Electric fields; Junctions; Silicon; Substrates; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location
Columbus, OH
Print_ISBN
978-1-4673-8134-5
Type
conf
DOI
10.1109/DRC.2015.7175585
Filename
7175585
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