• DocumentCode
    729245
  • Title

    Photothermal electric effect of multilayer MoS2-graphene heterojunction

  • Author

    Joon Young Kwak ; Jeonghyun Hwang ; Calderon, Brian ; Alsalman, Hussain ; Schutter, Brian ; Spencer, Michael G.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    Due to the exceptional electrical and optical properties of graphene, public interest has grown rapidly since the material was exfoliated onto SiO2 in 2004 [1-3]. Other two dimensional (2D) crystal materials such as MoS2, hBN, and WSe2, individually or in combination with graphene, also have shown intriguing properties. One of the interesting applications is using the 2D heterojunction as a photodetector. There have been literatures reported on graphene-MoS2 heterojunction photodetectors, claiming the photoresponse mechanism as a photovoltaic effect (PV), which is due to the separation of electron-hole pairs created in MoS2 at less than 700 nm wavelengths [4, 5]. In this paper, we report photothermal electric effect (PTE) of a multilayer MoS2-graphene heterojunction photodetector based on the large differences of Seebeck coefficients between MoS2 (-700 μV/K) [6] and graphene (-50 μV/K) [7].
  • Keywords
    Seebeck effect; chalcogenide glasses; graphene; molybdenum compounds; multilayers; photodetectors; photoelectricity; photothermal effects; semiconductor heterojunctions; 2D crystal materials; 2D heterojunction; MoS2-C; Seebeck coefficients; electrical properties; electron-hole pair separation; graphene; multilayer heterojunction photodetector; optical properties; photoresponse mechanism; photothermal electric effect; photovoltaic effect; Electric fields; Junctions; Silicon; Substrates; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175585
  • Filename
    7175585