• DocumentCode
    729255
  • Title

    Compressively strained GaSb P-channel MOSFETs with high hole mobility

  • Author

    Zhen Tan ; Lianfeng Zhao ; Yanwen Chen ; Jing Wang ; Jun Xu

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    III-V compound semiconductors have stirred a significant interest over the recent years, due to their advantageous carrier transport properties [1,2]. Particularly, the high hole mobility makes GaSb very attractive for the p-channel MOSFET application [3]. Although many techniques have been developed to improve the performance of GaSb MOSFETs [4], effects of strain engineering on GaSb MOSFETs have not been investigated yet. In this work, we demonstrated GaSb p-channel MOSFETs with various compressive strains and a peak hole mobility of 638 cm2/Vs is achieved.
  • Keywords
    III-V semiconductors; MOSFET; hole mobility; semiconductor device manufacture; GaSb; III-V compound semiconductors; P-channel MOSFET; carrier transport properties; hole mobility; strain engineering effects; Ethanol; Logic gates; MOSFET; Strain; Stress; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175603
  • Filename
    7175603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729255