Compressively strained GaSb P-channel MOSFETs with high hole mobility

III-V compound semiconductors have stirred a significant interest over the recent years, due to their advantageous carrier transport properties [1,2]. Particularly, the high hole mobility makes GaSb very attractive for the p-channel MOSFET application [3]. Although many techniques have been developed to improve the performance of GaSb MOSFETs [4], effects of strain engineering on GaSb MOSFETs have not been investigated yet. In this work, we demonstrated GaSb p-channel MOSFETs with various compressive strains and a peak hole mobility of 638 cm²/Vs is achieved.