Title :
Interfacial-oxygen-vacancy mediated doping of MoS2 by high-κ dielectrics
Author :
Rai, A. ; Valsaraj, A. ; Movva, H.C.P. ; Roy, A. ; Tutuc, E. ; Register, L.F. ; Banerjee, S.K.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
Dielectric engineering using high-κ oxides, such as atomic layer deposited (ALD) Al2Ox and HfOx, has been in widespread use to enhance the mobility of molybdenum disulfide (MoS2) based field effect transistors (FETs) [1,2]. This performance enhancement of MoS2 FETs in a high-κ environment is mainly attributed to the screening of Coulomb scattering from charged impurities, as well as the quenching of homopolar phonon modes of MoS2 [3]. However, the exact mechanism is still unclear. In this work, we demonstrate, using both experiment and theory, the n-doping of MoS2 mediated by interfacial-oxygen-vacancies at the high-κ-MoS2 interface, and propose a mechanism for the mobility enhancement effect in MoS2 devices upon high-κ encapsulation.
Keywords :
atomic layer deposition; field effect transistors; molybdenum compounds; semiconductor device manufacture; semiconductor doping; Al2Ox; Coulomb scattering; FET; HfOx; MoS2; atomic layer deposition; dielectric engineering; field effect transistors; high-κ dielectrics; high-κ encapsulation; high-κ oxides; homopolar phonon modes quenching; interfacial-oxygen-vacancy mediated doping; mobility enhancement effect; Atomic layer deposition; Doping; Hafnium compounds; Random access memory; Scattering;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175626
