Title :
10 nm nominal channel length MoS2 FETs with EOT 2.5 nm and 0.52 mA/µm drain current
Author :
Yang, L. ; Lee, R.T.P. ; Papa Rao, S.S. ; Tsai, W. ; Ye, P.D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Summary form only given. In this abstract, multi-layer MoS2 field-effect transistors (FET) [1] with record short 10 nm nominal channel length (Lch) and ultrathin gate dielectric (EOT~2.5 nm) have been demonstrated. These aggressively scaled devices show high performances including a drain current of 0.52 mA/μm, an on/off ratio larger than 106 and an extrinsic transconductance of 142 μS/μm. This study sheds light on the impact of channel thickness, channel length and gate dielectric scaling in multi-layer MoS2 FETs.
Keywords :
dielectric materials; field effect transistors; molybdenum compounds; EOT; FET; MoS2; channel thickness; drain current; extrinsic transconductance; multilayer field-effect transistors; nominal channel length; size 10 nm; ultrathin gate dielectric; Fabrication; Field effect transistors; Hafnium compounds; Logic gates; Nickel; Resistance;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175655
