Title :
High mobility in monolayer MoS2 devices grown by chemical vapor deposition
Author :
Smithe, Kirby K. H. ; English, Christopher D. ; Suryavanshi, Saurabh V. ; Pop, Eric
Author_Institution :
Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We have demonstrated FETs with L down to 80 nm on single-crystal 1L CVD-grown MoS2, with electrical properties comparable to (or better than) 1L exfoliated MoS2 and record current density. Such promising characteristics are realized in part through large-grain crystalline films with improved contacts. These results are an important step towards large-area electronics based on monolayer 2D semiconductors.
Keywords :
chemical vapour deposition; current density; field effect transistors; CVD; FET; MoS2; chemical vapor deposition; crystalline films; current density; electrical properties; high mobility; monolayer 2D semiconductors; monolayer devices; size 80 nm; Density measurement; Etching; Logic gates; Predictive models; Resistance; Resistance heating;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175656
