• DocumentCode
    729303
  • Title

    An analytic model for heterojunction and homojunction tunnel FETs with 3D density of states

  • Author

    Jianzhi Wu ; Jie Min ; Jingwei Ji ; Yuan Taur

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    249
  • Lastpage
    250
  • Abstract
    This paper presents an analytic model for double gate (DG) tunnel FETs with 3D density of states. By evaluating two WKB integrals for mixed electron and hole tunneling, continuous current-voltage characteristics are generated with a single integral over the carrier energy. The model covers both heterojunction and homojunction TFETs. The results have been verified by numerical simulations. An expression for the maximum TFET current is derived for the 3D case. The corresponding Ids-Vds characteristics are contrasted with those of the 1D maximum current case.
  • Keywords
    electrons; field effect transistors; numerical analysis; semiconductor device models; 3D density; analytic model; continuous current-voltage characteristics; double gate tunnel FET; electron; heterojunction tunnel FET; hole tunneling; homojunction tunnel FET; numerical simulations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175663
  • Filename
    7175663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729303