Evaluating Plasmonic Light Trapping With Photoluminescence

Author

Barugkin, Chog ; Yimao Wan ; Macdonald, Daniel ; Catchpole, Kylie R.

Author_Institution

Res. Sch. of Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

3

Issue

4

fYear

2013

fDate

Oct. 2013

Firstpage

1292

Lastpage

1297

Abstract

We use photoluminescence measurements to quantify the light trapping for a range of plasmonic structures. By combining Ag nanoparticles as a scattering structure and diffuse white paint as a back surface reflector (BSR) on silicon wafers, we can achieve absorption enhancement of 62% of the Lambertian value, which is comparable with literature values for inverted pyramids of 67%. Through measurements of the effective carrier lifetime, we also establish that plasmonic Ag particles do not degrade the electrical properties of the passivation layer.

Keywords

elemental semiconductors; nanoparticles; photoluminescence; plasmonics; silicon; silver; Ag; Lambertian value; Si; absorption enhancement; back surface reflector; diffuse white paint; effective carrier lifetime; inverted pyramid; nanoparticles; photoluminescence; plasmonic light trapping; plasmonic structures; scattering structure; silicon wafer; Absorption; Charge carrier processes; Light trapping; Nanoparticles; Passivation; Photoluminescence; Photovoltaic cells; Plasmons; Silicon; Absorption; nanoparticles; photoluminescence; silicon;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2013.2273570

Filename

6575129