Title :
Demonstration of Ge CMOS inverter and ring oscillator with 10 nm ultra-thin channel
Author :
Heng Wu ; Conrad, Nathan ; Mengwei Si ; Ye, Peide D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
In conclusion, we have demonstrated Ge CMOS devices with further scaled channel thickness of 10 nm. 9-stage ring oscillators are successfully realized. The channel thickness dependences of the devices behaviors are also studied and smaller Tch provides reduced SS and DIBL of MOSFETs and better voltage gain of CMOS inverters.
Keywords :
CMOS integrated circuits; MOSFET; invertors; CMOS inverters; DIBL; Ge; MOSFET; ring oscillator; size 10 nm; ultra-thin channel; CMOS integrated circuits; Inverters; Logic gates; MOSFET circuits;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175685
