• DocumentCode
    729325
  • Title

    Low temperature epitaxial germanium P+IN+IP+ selector for RRAM

  • Author

    Senthil Srinivasan, V.S. ; Das, B. ; Sangwan, V. ; Pinto Gomez, C. ; Oehme, M. ; Ganguly, U. ; Schulze, J.

  • Author_Institution
    Inst. of Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    289
  • Lastpage
    290
  • Abstract
    Summary form only given. Low temperature (<; 160 °C epi temperature) Ge based punch through selector has been demonstrated with good Ion/Ioff and matched with TCAD results. High Jon verifies the high dopant activation at low temperature. Benchmarking with the available selector technologies, Jon/Joff >104 with voltage designability makes Ge based selector an attractive option for RRAM.
  • Keywords
    elemental semiconductors; germanium; integrated circuit design; resistive RAM; semiconductor doping; Ge; RRAM; TCAD; dopant activation; low temperature epitaxial germanium P+IN+IP+ selector; punch through selector; selector technologies; voltage designability; Benchmark testing; Current density; ISO standards; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175689
  • Filename
    7175689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729325