Title :
Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs
Author :
Lagger, P. ; Schiffmann, Alexander ; Pobegen, Gregor ; Pogany, Dionyz ; Ostermaier, C.
Author_Institution :
Vienna Univ. of Technol., Vienna, Austria
Abstract :
The very fast dynamics of threshold voltage drift (ΔVth) of GaN-based metal-insulator-semiconductor-HEMTs induced by forward gate bias stress is investigated with a simple oscilloscope based setup. We show that the logarithmic recovery time dependence of ΔVth, previously found for recovery times ranging from 10 ms up to 1 ms, extend even to the μs regime. Further, we observed an accumulation of ΔVth because of repetitive stress pulses of 100 ns. Consequences for device operation and reliability are discussed.
Keywords :
MISFET; high electron mobility transistors; oscilloscopes; GaN; MIS-HEMT; forward gate bias stress; logarithmic recovery time dependence; metal-insulator-semiconductor-HEMT; oscilloscope based setup; threshold voltage drift; time 10 ms to 1 ms; Gallium nitride; HEMTs; Logic gates; Stress; Stress measurement; Threshold voltage; Voltage measurement; AlGaN/GaN; MOS; forward gate bias stress; high electron mobility transistor (HEMT); metal-insulator-semiconductor (MIS); reliability; threshold voltage drift; trapping;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2272095
