Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs

Author

Lagger, P. ; Schiffmann, Alexander ; Pobegen, Gregor ; Pogany, Dionyz ; Ostermaier, C.

Author_Institution

Vienna Univ. of Technol., Vienna, Austria

Volume

34

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

1112

Lastpage

1114

Abstract

The very fast dynamics of threshold voltage drift (ΔV_th) of GaN-based metal-insulator-semiconductor-HEMTs induced by forward gate bias stress is investigated with a simple oscilloscope based setup. We show that the logarithmic recovery time dependence of ΔV_th, previously found for recovery times ranging from 10 ms up to 1 ms, extend even to the μs regime. Further, we observed an accumulation of ΔV_th because of repetitive stress pulses of 100 ns. Consequences for device operation and reliability are discussed.

Keywords

MISFET; high electron mobility transistors; oscilloscopes; GaN; MIS-HEMT; forward gate bias stress; logarithmic recovery time dependence; metal-insulator-semiconductor-HEMT; oscilloscope based setup; threshold voltage drift; time 10 ms to 1 ms; Gallium nitride; HEMTs; Logic gates; Stress; Stress measurement; Threshold voltage; Voltage measurement; AlGaN/GaN; MOS; forward gate bias stress; high electron mobility transistor (HEMT); metal-insulator-semiconductor (MIS); reliability; threshold voltage drift; trapping;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2272095

Filename

6575130