DocumentCode
72949
Title
Effects of channel thickness on characteristics of HZO-TFTs fabricated at low temperature
Author
Wu, J. ; Han, D.D. ; Cong, Y.Y. ; Zhao, N.N. ; Chen, Z.F. ; Dong, J.C. ; Zhao, F.L. ; Zhang, S.D. ; Liu, L.F. ; Zhang, X. ; Wang, Y.
Author_Institution
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Volume
51
Issue
11
fYear
2015
fDate
5 28 2015
Firstpage
867
Lastpage
869
Abstract
The channel process to further improve the performance of bottom gate hafnium-doped zinc oxide (HZO) thin-film transistors (TFTs) is optimised. The effects of channel thickness on the electrical performances of HZO TFTs is studied. The results show that the extracted saturation mobility increases first and then decreases with the increase of HZO film thickness, reaching maximum when the channel thickness is optimum. The dependence of the optimum thickness on channel length is studied and it is found that optimum thickness increases with the increase of channel length.
Keywords
II-VI semiconductors; hafnium; thin film transistors; wide band gap semiconductors; zinc compounds; HZO-TFT; ZnO:Hf; bottom gate hafnium-doped zinc oxide; channel length thickness effect; saturation mobility extraction; thin-film transistor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2015.0362
Filename
7110759
Link To Document