NEGF-based transport phenomena for semiconduncting CNTFET

Author

Farhana, Soheli ; Zahirul Alam, A.H.M. ; Khan, Sheroz ; Motakabber, S.M.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia

fYear

2015

fDate

17-19 Feb. 2015

Firstpage

1

Lastpage

3

Abstract

A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green´s Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is realized by the carrier transport in the conduction and valence band. This phenomenon of CNT introduces a excellent quality of semiconducting material. The output current voltage characteristic is analyzed and simulated in this paper. From the simulated results, the behavior of the ON states current of semiconducting CNT is realized in 69.5μA.

Keywords

Green´s function methods; carbon nanotube field effect transistors; conduction bands; semiconductor device models; valence bands; C; CNT chiral vector; CNTFET transport properties; NEGF-based transport phenomena; ballistic CNTFET; carbon nanotube field effect transistor; carrier transport; conduction band; current 69.5 muA; nonequilibrium Green´s function; output current voltage characteristic; semiconducting material; semiconduncting CNTFET; valence band; CNTFETs; Carbon nanotubes; Green´s function methods; Logic gates; Mathematical model; Performance evaluation; CNTFET; NEGF; semiconductor; transport;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Technology: Towards New Smart World (NSITNSW), 2015 5th National Symposium on

Conference_Location

Riyadh

Print_ISBN

978-1-4799-7625-6

Type

conf

DOI

10.1109/NSITNSW.2015.7176386

Filename

7176386