Light-emitting diodes on Si (110) substrate

Author

Chih-Yen Chen ; Horng-Shyang Chen ; Zhan Hui Liu ; Chun-Han Lin ; Chia-Ying Su ; Ta-Wei Chang ; Pei-Ying Shih ; Chung-Hui Chen ; Wang-Hsien Chou ; Chieh Hsieh ; Wen-Ming Chang ; Yean-Woei Kiang ; Yang, C.C.

Author_Institution

Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2013

fDate

10-12 Nov. 2013

Firstpage

250

Lastpage

251

Abstract

We study the morphologies, material properties, and optical characteristics of an InGaN/GaN QW light-emitting diode (LED) structure grown on a <;1-10>-oriented one-dimensional trench-patterned Si (110) substrate with other samples of different trench orientations on Si (110) substrate, flat Si (110) substrate, and Si (111) substrate are demonstrated. By comparing the performances of the fabricated LEDs based on the three samples of continuous top surfaces, it is found that the sample of <;1-10>-oriented trench has the strongest output power, lowest device resistance, and smallest spectral shift range in increasing injection current.

Keywords

III-V semiconductors; crystal morphology; crystal orientation; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; <;1-10>-oriented one-dimensional trench-pattern; InGaN-GaN; InGaN-GaN QW light emitting diode; LED structure; Si; Si (111) substrate; flat Si (110) substrate; injection current; material properties; morphology; optical characteristics; spectral shift range; trench orientations; Anisotropic magnetoresistance; Epitaxial growth; Gallium nitride; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Lighting (ChinaSSL), 2013 10th China International Forum on

Conference_Location

Beijing

Print_ISBN

978-1-4799-2249-9

Type

conf

DOI

10.1109/SSLCHINA.2013.7177361

Filename

7177361