Title :
Experimental Demonstration of Ferroelectric Gate-Stack AlGaN/GaN-on-Si MOS-HEMTs With Voltage Amplification for Power Applications
Author :
Chen, P.-G. ; Wei, Y.-T. ; Tang, M. ; Lee, Moon Ho
Author_Institution :
Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
AlGaN/GaN-on-Si metal-oxide-semiconductor high-electron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4% enhancement) using the negative capacitance (NC) effect. An IDlin with~23% enhancement and a high overdrive voltage implies a higher dΨ/dVg at 2-D electron gas, due to NC with small VDS. The channel conductance (gd) at almost zero VDS exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.
Keywords :
III-V semiconductors; aluminium compounds; ferroelectric devices; gallium compounds; power HEMT; power MOSFET; silicon; wide band gap semiconductors; 2D electron gas; AlGaN-GaN-Si; ferroelectric gate-stack MOS-HEMT; high electron mobility transistor; integrated ferroelectric polarization gate stacks; metal oxide semiconductor transistor; negative capacitance; overdrive voltage; power application; voltage amplification; Aluminum gallium nitride; Capacitance; Gallium nitride; HEMTs; Iron; Logic gates; AlGaN/GaN; ferroelectric (FE); subthreshold swing (SS); subthreshold swing (SS).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2330504
