Enhanced ESD power clamp for antenna switch controller with SOI CMOS technology

An enhanced electrostatic discharge (ESD) power clamp for an antenna switch controller with silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology is presented. The gate drive voltages of larger n-type metal-oxide-semiconductor transistors in a stacked configuration of a RC-triggered power clamp have been optimised to obtain larger discharging capability and shorter turn-on time compared to the conventional topology. The proposed ESD power clamp circuits are implemented in a double-pole five-throw antenna switch controller and the experimental results confirm the validity of this approach.