• DocumentCode
    730948
  • Title

    Nonradiative trapping and localization in intermediate band solar cells

  • Author

    Krich, Jacob J.

  • Author_Institution
    Dept. of Phys., Univ. of Ottawa, Ottawa, ON, Canada
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Abstract
    For intermediate band solar cells (IBSC) to achieve high efficiency, the gains in light absorption due to the intermediate band (IB) must exceed the nonradiative losses from mid-gap states. An important proposal holds that in IB´s formed from bulk doping, when the energy states of the IB are delocalized (i.e., metallic), they do not significantly reduce the nonradiative lifetime. We show that this proposal is incorrect because the motion of the crystal lattice will always relocalize IB states. We compare this result to band-to-band nonradiative recombination, which is well known to be slow. For IBSC´s to realize their potential, research must move away from delocalizing IB states.
  • Keywords
    carrier lifetime; light absorption; semiconductor doping; solar cells; bulk doping; crystal lattice; intermediate band solar cells; light absorption; nonradiative localization; nonradiative recombination; nonradiative trapping; Approximation methods; Charge carrier processes; Couplings; Impurities; Lattices; Radiative recombination; charge carrier lifetime; mathematical model; photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), PART 2, 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC-Vol2.2013.7179242
  • Filename
    7179242