DocumentCode
730948
Title
Nonradiative trapping and localization in intermediate band solar cells
Author
Krich, Jacob J.
Author_Institution
Dept. of Phys., Univ. of Ottawa, Ottawa, ON, Canada
fYear
2013
fDate
16-21 June 2013
Abstract
For intermediate band solar cells (IBSC) to achieve high efficiency, the gains in light absorption due to the intermediate band (IB) must exceed the nonradiative losses from mid-gap states. An important proposal holds that in IB´s formed from bulk doping, when the energy states of the IB are delocalized (i.e., metallic), they do not significantly reduce the nonradiative lifetime. We show that this proposal is incorrect because the motion of the crystal lattice will always relocalize IB states. We compare this result to band-to-band nonradiative recombination, which is well known to be slow. For IBSC´s to realize their potential, research must move away from delocalizing IB states.
Keywords
carrier lifetime; light absorption; semiconductor doping; solar cells; bulk doping; crystal lattice; intermediate band solar cells; light absorption; nonradiative localization; nonradiative recombination; nonradiative trapping; Approximation methods; Charge carrier processes; Couplings; Impurities; Lattices; Radiative recombination; charge carrier lifetime; mathematical model; photovoltaic cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), PART 2, 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC-Vol2.2013.7179242
Filename
7179242
Link To Document