Title :
Charged particle radiation effects on flexible a-Si/a-SiGe/a-SiGe triple junction solar cells for space use
Author :
Sato, Shin-ichiro ; Beernink, Kevin ; Ohshima, Takeshi
Author_Institution :
Japan Atomic Energy Agency, Takasaki, Japan
Abstract :
Performance degradation of a-Si/a-SiGe/a-SiGe triple-junction solar cells due to irradiation of silicon ions., high-energy electrons, and protons are investigated using an in-situ current-voltage measurement system. The room temperature (RT) annealing effects immediately after irradiation are also investigated and the significant RT annealing is always observed independent of radiation species. By analyzing the energy loss process of incident particles (ionizing energy loss and non-ionizing energy loss), the radiation degradation mechanism is discussed. It is concluded that both the ionizing energy loss and the non-ionizing energy loss contribute the degradation.
Keywords :
Ge-Si alloys; radiation hardening (electronics); semiconductor junctions; solar cells; Si-SiGe-SiGe; charged particle radiation effect; current-voltage measurement system; high-energy electrons; high-energy protons; radiation degradation; radiation species; room temperature annealing; silicon ion irradiation; triple junction solar cells; Degradation; IEL; Ions; Photovoltaic cells; Protons; Radiation effects; Silicon; amorphous semiconductors; ion radiation effects; photovoltaic cells; radiation hardening;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), PART 2, 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC-Vol2.2013.7179251
