Mo doped GaN thin film growth using Thermionic Vacuum Arc (TVA)

Mo doped GaN thin films were produced by the Thermionic Vacuum Arc (TVA) technique. This is the first paper about doped GaN thin film deposition on glass by TVA. We present a new deposition method for GaN thin films that produces in a very short production time. Physical properties of sample were analyzed with Filmetrics F20 device, atomic force microscope (AFM), energy dispersive x-ray spectroscopy (EDX) and UV-Vis Spectrophotometer device. The obtained properties are nearly associated with the values reported in literature. Our analysis showed that the TVA method present important advantages for optical and industrial applications.