Low-voltage electrostatically driven nanoelectromechanical-switches

Author

Iizuka, Hiro ; Ono, Takahito

Author_Institution

Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan

fYear

2015

fDate

21-25 June 2015

Firstpage

560

Lastpage

563

Abstract

Electrostatically-driven nanoelectromechanical (NEM) switches based on silicon and tungsten as a base material are designed and fabricated by reactive ion etching using Bosch process, and their switching performances are evaluated. The NEM switches consist of three isolated electrodes, i.e. gate, drain, and nanomechanical source. A low switching voltage of 0.8 V is achieved for the Si-based switch with a flexible mechanical structure and the narrow electrode gaps of electrostatic actuators. A method for high aspect ratio etching of W using Bosch process is developed and W-based NEM switches are also developed.

Keywords

electrodes; electrostatic actuators; flexible electronics; nanoelectromechanical devices; silicon; sputter etching; switches; tungsten; Bosch process; Si; W; base material; electrode gaps; electrostatic actuators; electrostatically-driven NEM switches; flexible mechanical structure; high aspect ratio etching; isolated electrodes; nanoelectromechanical-switches; nanomechanical source; reactive ion etching; silicon; switching voltage; tungsten; voltage 0.8 V; Electrodes; Etching; Logic gates; Resonant frequency; Silicon; Switches; Voltage measurement; Bosch process; Electrostatic actuator; Nanoelectromechanical switches; Reactive ion etching (DRIE);

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on

Conference_Location

Anchorage, AK

Type

conf

DOI

10.1109/TRANSDUCERS.2015.7180985

Filename

7180985