Title :
Simulation of microloading and ARDE in DRIE
Author :
Gosalvez, M.A. ; Zhou, Y. ; Zhang, Y. ; Zhang, G. ; Li, Y. ; Xing, Y.
Author_Institution :
Dept. of Mater. Phys., Univ. of the Basque Country UPV/EHU, San Sebastian, Spain
Abstract :
An atomisitic etching model is combined with a continuum concentration solver in order to realistically simulate various effects during Deep Reactive Ion Etching (DRIE or the Bosch process). This includes microloading (or loading effect) and Aspect Ratio Dependent Etching (ARDE or lag effect). The model strongly differs from the current simulation approaches in which the local etch rate depends markedly on complex visibility integrals over the ion and neutral fluxes. Instead, we focus on the description of the etchant depletion.
Keywords :
semiconductor technology; sputter etching; ARDE; Bosch process; DRIE; aspect ratio dependent etching; atomisitic etching model; deep reactive ion etching; lag effect; microloading; Etching; Ions; Mathematical model; Polymers; Silicon; Solid modeling; Aspect Ratio Dependent Etching; Deep Reactive Ion Etching; diffusion; loading; microloading; simulation;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location :
Anchorage, AK
DOI :
10.1109/TRANSDUCERS.2015.7181158
