DocumentCode :
731898
Title :
A unified epi-seal process for resonators and inertial sensors
Author :
Yang, Yushi ; Ng, Eldwin J. ; Yunhan Chen ; Flader, Ian B. ; Ahn, Chae Hyuck ; Hong, Vu A. ; Kenny, Thomas W.
Author_Institution :
Stanford Univ., Stanford, CA, USA
fYear :
2015
fDate :
21-25 June 2015
Firstpage :
1326
Lastpage :
1329
Abstract :
A thin-film wafer-level encapsulation process which incorporates both narrow (0.7 μm) and wide (>50 μm) lateral transduction gaps, in-plane and out-of-plane electrodes, and does not require release etch-holes is presented. High stability, high quality factor (Q) resonant devices as well as inertial sensors are fabricated in the process. The great diversity of functioning devices built in this process demonstrates the potential for combinations of high-performance MEMS devices in a single process and even in single chips.
Keywords :
Q-factor; encapsulation; micromechanical devices; resonators; sensors; wafer level packaging; in-plane electrodes; inertial sensors; lateral transduction gaps; out-of-plane electrodes; quality factor; resonators; size 0.7 mum; stability; thin-film wafer-level encapsulation process; unified epi-seal process; Electrodes; Encapsulation; Fabrication; Micromechanical devices; Performance evaluation; Sensors; Silicon; Epi-seal process; Fabrication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location :
Anchorage, AK
Type :
conf
DOI :
10.1109/TRANSDUCERS.2015.7181176
Filename :
7181176
Link To Document :
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