Investigating thin film passivations for IGZO dual gate pH sensors fabricated at low temperature

Author

Pavlidis, S. ; Getz, P. ; Hagen, J. ; Kelley-Loughnane, N. ; Bayraktaroglu, B. ; Brand, O.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2015

fDate

21-25 June 2015

Firstpage

1334

Lastpage

1337

Abstract

Dual-gate IGZO TFTs fabricated using high-k dielectrics deposited via ALD at low temperature (<; 180°C) are proposed for chemical and biosensor applications, leading to an investigation of suitable passivation films for such devices. Both PECVD and ALD films are considered for the passivation layer, which also serves as the liquid sensing gate, and it is found that ALD TiO₂ offers a sensitivity of 76 mV/pH, which is beyond the Nernst limit found in traditional ISFET sensors.

Keywords

CVD coatings; atomic layer deposition; chemical sensors; high-k dielectric thin films; indium compounds; pH measurement; passivation; thin film sensors; thin film transistors; titanium compounds; ALD films; InGaZnO; PECVD films; TiO₂; atomic layer deposition; biosensor application; chemical sensor application; dual gate pH sensors; low temperature; passivation films; thin film passivations; Films; Logic gates; Passivation; Sensitivity; Temperature sensors; Thin film transistors; Dual Gate; Indium Gallium Zinc Oxide; Passivation; Thin film transistor; pH Sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on

Conference_Location

Anchorage, AK

Type

conf

DOI

10.1109/TRANSDUCERS.2015.7181178

Filename

7181178