Title :
Sulfur-doping in graphene and its high selectivity gas sensing in NO2
Author :
Liang, C. ; Wang, Y.L. ; Li, T.
Author_Institution :
Sci. & Technol. on Microsyst. Lab., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
Sulfur-doping in graphene is of great importance because it could not only open the band-gap of graphene, but also improve the adsorption of NO2 over graphene. In this paper, a simple but efficient strategy was demonstrated to dope S atoms in graphene by introducing hydrogen sulfide gas flow as sulfur source at 1000°C. It´s confirmed by transmission electron microscopy and Raman spectrum that S atoms were doped successfully by surface adsorption forming honeycomb carbon-sulfur compound crystal domains. Gas sensing test indicated that S-doped graphene showed high selectivity gas sensing to NO2 compared with NH3, CH4, SO2 and CO.
Keywords :
Raman spectra; adsorption; doping; gas sensors; graphene; nanosensors; nitrogen compounds; sulphur; transmission electron microscopy; C:S; NO2; Raman spectrum; gas sensing test; graphene; honeycomb carbon-sulfur compound crystal domains; hydrogen sulfide gas flow; sulfur-doping; surface adsorption; temperature 1000 degC; transmission electron microscopy; Annealing; Argon; Doping; Films; Fluid flow; Graphene; Sulfur; Sulfur-doping; annealing with H2S; graphene; high selectivity NO2 sensing;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location :
Anchorage, AK
DOI :
10.1109/TRANSDUCERS.2015.7181200
