Inorganic material-based flexible CMOS circuit and optical sensor

A mechanically flexible complementary metal-oxide-semiconductor (CMOS) inverter and optical sensor are developed by integrating p-type carbon nanotubes (CNTs) network thin-film transistors (TFTs) and n-type InGaZnO TFTs on a polyimide substrate. Although a flexible CMOS circuitry has been reported [1], mechanical reliability and its sensor application have yet to be demonstrated. Here, we demonstrate a flexible CMOS inverter and an optical sensor using CNT and InGaZnO with relatively high field-effect mobility. Furthermore, we experimentally confirmed that these devices are mechanically stable by comparing electrical properties under flat and bending states.