Graphene RF NEMS shunt switches for analog and digital phase shifters

Author

Moldovan, C.F. ; Vitale, W.A. ; Tamagnone, M. ; Ionescu, A.M.

Author_Institution

EPFL, Nanoelectronic Devices Lab. (NanoLab), Lausanne, Switzerland

fYear

2015

fDate

21-25 June 2015

Firstpage

2029

Lastpage

2032

Abstract

We present the wafer-level fabrication and the first measurements of RF capacitive NEMS switches based on CVD multilayer graphene for wideband RF phase shifters for analog and digital applications. We assess the phase shifter performance by using the characterization data of the fabricated NEMS switches to perform calibrated simulations using an equivalent circuit. We demonstrate the possibility to achieve 355°/dB at 2.4 GHz for the analog design and 138°/dB at 2.4 GHz for the digital one.

Keywords

equivalent circuits; graphene devices; nanoelectromechanical devices; phase shifters; radiofrequency integrated circuits; switches; wafer level packaging; CVD multilayer graphene; RF capacitive NEMS switches; analog phase shifters; digital phase shifters; equivalent circuit; frequency 2.4 GHz; graphene RF NEMS shunt switches; wafer-level fabrication; wideband RF phase shifters; Attenuation; Capacitors; Graphene; Nanoelectromechanical systems; Phase shifters; Radio frequency; Switches; CVD; Capacitive Switches; DNTL; Graphene; Micro-Electro-Mechanical Systems (MEMS); Micromachining; Multilayer; Phase Shifter; Radio-frequency (RF);

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on

Conference_Location

Anchorage, AK

Type

conf

DOI

10.1109/TRANSDUCERS.2015.7181354

Filename

7181354