DocumentCode
732021
Title
Terahertz field detector based on electron emission
Author
Zhao, X. ; Zhang, J. ; Fan, K. ; Seren, H.R. ; Averitt, R.D. ; Zhang, X.
Author_Institution
Boston Univ., Boston, MA, USA
fYear
2015
fDate
21-25 June 2015
Firstpage
2085
Lastpage
2088
Abstract
This paper reports the electric field induced electron emission across the capacitive gap in a metamaterial structure under intense terahertz (THz) pulses. The gold metamaterial fabricated on a silicon nitride thin film can enhance the electric field greatly around the resonance frequency, resulting in THz field induced electron emission across the capacitive gap in the metamaterial structure when the incident electric field is > 60kV/cm. The emission current is measured experimentally and shows dependency on the strength of the incident field strength, which can be used as a THz detector.
Keywords
capacitance measurement; capacitive sensors; electric current measurement; electric field measurement; electron emission; gold; silicon compounds; submillimetre wave detectors; terahertz metamaterials; terahertz wave detectors; thin film sensors; Au-SiN; THz detector; capacitive gap; electric field induced electron emission; emission current measurement; gold metamaterial structure; silicon nitride thin film; terahertz field detector; Current measurement; Detectors; Electric fields; Electron emission; Metamaterials; Resonant frequency; Time-frequency analysis; Field Electron Emission; THz Detector; THz Metamaterial;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location
Anchorage, AK
Type
conf
DOI
10.1109/TRANSDUCERS.2015.7181368
Filename
7181368
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