DocumentCode :
732021
Title :
Terahertz field detector based on electron emission
Author :
Zhao, X. ; Zhang, J. ; Fan, K. ; Seren, H.R. ; Averitt, R.D. ; Zhang, X.
Author_Institution :
Boston Univ., Boston, MA, USA
fYear :
2015
fDate :
21-25 June 2015
Firstpage :
2085
Lastpage :
2088
Abstract :
This paper reports the electric field induced electron emission across the capacitive gap in a metamaterial structure under intense terahertz (THz) pulses. The gold metamaterial fabricated on a silicon nitride thin film can enhance the electric field greatly around the resonance frequency, resulting in THz field induced electron emission across the capacitive gap in the metamaterial structure when the incident electric field is > 60kV/cm. The emission current is measured experimentally and shows dependency on the strength of the incident field strength, which can be used as a THz detector.
Keywords :
capacitance measurement; capacitive sensors; electric current measurement; electric field measurement; electron emission; gold; silicon compounds; submillimetre wave detectors; terahertz metamaterials; terahertz wave detectors; thin film sensors; Au-SiN; THz detector; capacitive gap; electric field induced electron emission; emission current measurement; gold metamaterial structure; silicon nitride thin film; terahertz field detector; Current measurement; Detectors; Electric fields; Electron emission; Metamaterials; Resonant frequency; Time-frequency analysis; Field Electron Emission; THz Detector; THz Metamaterial;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location :
Anchorage, AK
Type :
conf
DOI :
10.1109/TRANSDUCERS.2015.7181368
Filename :
7181368
Link To Document :
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