DocumentCode :
732256
Title :
Analysis of peak currents in integrated synchronous rectifiers
Author :
Gallichan, Robert ; McCormick, Daniel ; Hasan, Rezaul ; Hu, Patrick ; Budgett, David
fYear :
2015
fDate :
7-10 June 2015
Firstpage :
1
Lastpage :
4
Abstract :
Powering active implantable devices is challenging. Implants must be small and have a long lifetime. Wireless power offers energy over the life of the device. Using integrated circuits for managing wireless power transfer allows for a small implant. Often when implemented in CMOS, a synchronous rectifier is used to achieve AC-DC conversion. Current spikes can occur in the rectifier and must be considered to avoid electromigration. This paper presents the analysis of the peak currents in the synchronous rectifier. Reducing the peak current can be achieved by decreasing the size of the rectifying transistors. We have developed and fabricated the control circuitry for a synchronous rectifier in XFABs XH018 180nm high voltage CMOS process. A finalised synchronous rectifier is being designed which will be used to confirm our analysis.
Keywords :
AC-DC power convertors; CMOS integrated circuits; inductive power transmission; rectifying circuits; AC-DC conversion; XFAB XH018 high voltage CMOS process; control circuitry; integrated synchronous rectifiers; peak current analysis; rectifying transistors; size 180 nm; wireless power transfer; MOSFET; Rectifiers; Resistance; Switches; Wireless communication; Wireless sensor networks;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International
Conference_Location :
Grenoble
Type :
conf
DOI :
10.1109/NEWCAS.2015.7182040
Filename :
7182040
Link To Document :
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