Inductorless low power wideband LNA in 130 nm CMOS

Author

de Souza, Marcelo ; Mariano, Andre A. ; Taris, Thierry

Author_Institution

Fed. Technol. Univ. - Parana, Curitiba, Brazil

fYear

2015

fDate

7-10 June 2015

Firstpage

1

Lastpage

4

Abstract

This work proposes an inductorless wideband low noise amplifier (LNA) for multistandard applications. This LNA is based on a self-biased complementary current-reuse common source amplifier on the forward path and a source follower on the feedback, using a gyrator-C like effect to create real valued impedance and an inductive effect, achieving wideband input matching. Designed in IBM 130 nm CMOS process, it presents NF of 2.7 dB, voltage gain of 22.8 dB, IIP₃ of -6 dBm. The power consumption is 2.8 mW for a supply voltage of 1.2 V.

Keywords

CMOS integrated circuits; gyrators; low noise amplifiers; low-power electronics; wideband amplifiers; IBM CMOS process; common source amplifier; forward path; gain 22.8 dB; gyrator-C like effect; inductorless low power wideband LNA; low noise amplifier; multistandard applications; noise figure 2.7 dB; power 2.8 mW; self-biased complementary current-reuse; size 130 nm; source follower; voltage 1.2 V; wideband input matching; CMOS integrated circuits; Gain; Impedance; Noise; Noise measurement; Radio frequency; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International

Conference_Location

Grenoble

Type

conf

DOI

10.1109/NEWCAS.2015.7182046

Filename

7182046