• DocumentCode
    732301
  • Title

    Electrostatic discharge sensitivity investigation on organic field-effect thin film transistors

  • Author

    Lim, Tekfouy ; Gieser, Horst ; Santarelli, Luca ; Cacialli, Franco

  • Author_Institution
    Anal. & Test of Integrated Syst. ATIS, Fraunhofer Res. Instn. for Modular Solid State, Munich, Germany
  • fYear
    2015
  • fDate
    7-10 June 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Conventional CMOS technologies require high production costs, which are largely due to masks production and high specification equipment. Interestingly, conjugated polymers and plastic semiconductors offer potential substitutes to lower the production expenses. Such materials can be used in applications such as organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), and organic photovoltaics (OPVs). However, electrical reliability, and especially potential damage by electrostatic discharge (ESD), is a major issue in the production cycle and cost, and also during operation. Here we present investigation of the ESD sensitivity of OFETs based on poly (3-hexylthiophene-2,5-diyl) (P3HT), which has so far received little or no attention in the literature.
  • Keywords
    electrostatic discharge; field effect transistors; organic semiconductors; plastics; polymers; semiconductor device reliability; CMOS technologies; ESD sensitivity; OFET; OLED; OPV; P3HT; conjugated polymers; electrical reliability; electrostatic discharge sensitivity; organic field-effect thin film transistors; organic light-emitting diodes; organic photovoltaics; plastic semiconductors; poly(3-hexylthiophene-2,5-diyl); production cycle; Current measurement; Electrostatic discharges; Leakage currents; Logic gates; OFETs; Plastics; Organic field-effect transistor (OFET); Regioregular poly(3-hexylthiophene-2, 5-diyl) (P3HT); electrostatic discharge (ESD);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International
  • Conference_Location
    Grenoble
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2015.7182117
  • Filename
    7182117