Title :
Mobility enhancement of graphene nanoribbon by ALD HfO2 and its optoelectronic properties
Author :
Xuechao Yu ; Qi Jie Wang
Author_Institution :
Photonics Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We demonstrated that depositing HfO2 film on graphene nanoribbons greatly enhance the mobility through weakening the Coulombic interactions. As a result, the graphene nanoribbon photodetectors with HfO2 layer exhibits high responsivity of ~2A/W at room temperature.
Keywords :
atomic layer deposition; carrier mobility; field effect transistors; graphene; graphene devices; hafnium compounds; high-k dielectric thin films; mercury compounds; nanoelectronics; nanoribbons; nanosensors; photodetectors; thin film sensors; ALD; Coulombic interactions; HfO2-C; field-effect transistor; graphene nanoribbon photodetectors; mobility enhancement; optoelectronic properties; temperature 293 K to 298 K; thin film; Field effect transistors; Graphene; Hafnium compounds; Lighting; Measurement by laser beam; Photoconductivity; Scattering;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
