Title :
BTI-Aware Sleep Transistor Sizing Algorithm for Reliable Power Gating Designs
Author :
Kai-Chiang Wu ; Ing-Chao Lin ; Yao-Te Wang ; Shuen-Shiang Yang
Author_Institution :
Dept. of Comput. Sci., Nat. Chao Tung Univ., Hsinchu, Taiwan
Abstract :
Power gating is an effective way to reduce leakage power. This technique uses high Vth transistors, called sleep transistors, to turn off the power supply. However, sleep transistors suffer from the bias temperature instability (BTI) effect, resulting in an increased Vth, and reduced reliability. This paper proposes two BTI-aware sleep transistor sizing algorithms to reduce the total width of sleep transistors based on the distributed sleep transistor network structure. The proposed algorithms reduce total width by more than 16.08%. More area can be reduced if the BTI effect on both sleep and cluster transistors is considered.
Keywords :
MOSFET; negative bias temperature instability; semiconductor device reliability; BTI-aware sleep transistor sizing algorithm; bias temperature instability effect; cluster transistors; distributed sleep transistor network structure; leakage power reduction; power supply; reliable power gating designs; total width reduction; Algorithm design and analysis; Clustering algorithms; Degradation; Resistance; Runtime; Switching circuits; Transistors; BTI effect; power gating; reliability;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2014.2334331