Title :
Phonon-assisted population inversion of a single quantum dot
Author :
Brash, A.J. ; Quilter, J.H. ; Liu, F. ; Glassl, M. ; Barth, A.M. ; Axt, V.M. ; Ramsay, A.J. ; Skolnick, M.S. ; Fox, A.M.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, Sheffield, UK
Abstract :
We demonstrate a new method to produce a population inversion in an InGaAs quantum dot by quasi-resonant, incoherent excitation within the LA phonon sideband. A maximum exciton population of 0.67 is measured; applications include single photon sources and single QD lasers.
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; phonons; population inversion; semiconductor quantum dots; InGaAs; LA phonon sideband; exciton population; phonon-assisted population inversion; quasiresonant incoherent excitation; single photon sources; single quantum dot lasers; Amplitude modulation; Excitons; Phonons; Photonics; Quantum dot lasers; Sociology; Statistics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
