Title :
GaN L3 photonic crystal cavities with an average quality factor in excess of 16000 in the near infrared
Author :
Trivino, Noelia Vico ; Minkov, Momchil ; Urbinati, Giulia ; Galli, Matteo ; Carlin, Jean-Francois ; Butte, Raphael ; Savona, Vincenzo ; Grandjean, Nicolas
Author_Institution :
Inst. of Condensed Matter Phys., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
Abstract :
GaN L3 photonic crystal cavities were fabricated based on a genetic algorithm optimization. Optical characterization of several replicas led to an average unloaded quality factor of 16900, which is well accounted for by first-principles simulations.
Keywords :
III-V semiconductors; Q-factor; ab initio calculations; gallium compounds; genetic algorithms; optical fabrication; photonic crystals; wide band gap semiconductors; GaN; GaN L3 photonic crystal cavity; first-principles simulations; genetic algorithm optimization; near infrared; optical characterization; quality factor; Cavity resonators; Gallium nitride; Genetic algorithms; Optimization; Photonic crystals; Q-factor; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
